Solution-processed PbS quantum dot infrared photodetectors and photovoltaics.
نویسندگان
چکیده
In contrast to traditional semiconductors, conjugated polymers provide ease of processing, low cost, physical flexibility and large area coverage. These active optoelectronic materials produce and harvest light efficiently in the visible spectrum. The same functions are required in the infrared for telecommunications (1,300-1,600 nm), thermal imaging (1,500 nm and beyond), biological imaging (transparent tissue windows at 800 nm and 1,100 nm), thermal photovoltaics (>1,900 nm), and solar cells (800-2,000 nm). Photoconductive polymer devices have yet to demonstrate sensitivity beyond approximately 800 nm (refs 2,3). Sensitizing conjugated polymers with infrared-active nanocrystal quantum dots provides a spectrally tunable means of accessing the infrared while maintaining the advantageous properties of polymers. Here we use such a nanocomposite approach in which PbS nanocrystals tuned by the quantum size effect sensitize the conjugated polymer poly[2-methoxy-5-(2'-ethylhexyloxy-p-phenylenevinylene)] (MEH-PPV) into the infrared. We achieve, in a solution-processed device and with sensitivity far beyond 800 nm, harvesting of infrared-photogenerated carriers and the demonstration of an infrared photovoltaic effect. We also make use of the wavelength tunability afforded by the nanocrystals to show photocurrent spectra tailored to three different regions of the infrared spectrum.
منابع مشابه
Modeling of High Temperature GaN Quantum Dot Infrared Photodetectors
In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure. Throughout the modeling, we tried to consider the limiting factors which dec...
متن کاملField-emission from quantum-dot-in-perovskite solids
Quantum dot and well architectures are attractive for infrared optoelectronics, and have led to the realization of compelling light sensors. However, they require well-defined passivated interfaces and rapid charge transport, and this has restricted their efficient implementation to costly vacuum-epitaxially grown semiconductors. Here we report solution-processed, sensitive infrared field-emiss...
متن کاملSolution-processed infrared photovoltaic devices with > 10 % monochromatic internal quantum efficiency
Large-area, physically flexible, solution-cast photovoltaics are of urgent interest to realize low-cost solar cells. Polymer, polymer-fullerene, and polymer-nanocrystal photovoltaics absorb light only to wavelengths as long as 750 nm, with the exception of one recent report out to 1000 nm. Half of the sun’s power spectrum lies beyond 700 nm; one third beyond 1000 nm; and infrared emitters of gr...
متن کاملModification of hybrid active bilayer for enhanced efficiency and stability in planar heterojunction colloidal quantum dot photovoltaics
Solution-processed planar heterojunction colloidal quantum dot photovoltaics with a hybrid active bilayer is demonstrated. A power conversion efficiency of 1.24% under simulated air mass 1.5 illumination conditions is reported. This was achieved through solid-state treatment with cetyltrimethylammonium bromide of PbS colloidal quantum dot solid films. That treatment was used to passivate Br ato...
متن کاملTunable and Energetically Robust PbS Nanoplatelets for Optoelectronic Applications
PbS nanoplatelets (NPLs) are proposed as robust materials for novel optoelectronic devices. Compared to quantum dot assemblies, ab initio simulations are employed to show that such pseudo-two-dimensional systems may provide stronger absorption and higher carrier mobility due to the distinct wave function distributions, large electronic couplings, and small hopping barriers. More importantly, bo...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Nature materials
دوره 4 2 شماره
صفحات -
تاریخ انتشار 2005